Method for manufacturing a reliable semiconductor device using E

Details Method for manufacturing a reliable semiconductor device using E Method for manufacturing a reliable semiconductor device using E

1997-03-21

2000-06-06

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438624, 438637, 438675, 438680, 938788, 156345, H01L 2131, H01L 21469

Patent

active

060718323

ABSTRACT:
A method for manufacturing a semiconductor device having a high durability against a hot carrier problem and reliable transistor characteristics comprises the steps of forming a first silicon oxide film by atmospheric pressure CVD, forming a silicon nitride film by low pressure CVD to a thickness of 30 to 200 angstroms, and forming a silicon oxide film by biased electron cyclotron resonance CVD (ECR-CVD) using a silane gas as a source material while applying a radio frequency electric field to the substrate. The ECR-CVD silicon oxide film provides a sufficient amount of active hydrogen ions, and silicon nitride film allows movement of an adequate amount of the active hydrogen ions to thereby eliminate the hot carrier problem and recovery of transistor characteristics from the plasma damage.

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