Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1991-08-09
1993-05-25
Beck, Shrive
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
427 96, 427 99, 4272481, 427379, 4273977, C23C 1400, C23C 1600
Patent
active
052136701
ABSTRACT:
A manufacturing method for polycrystalline silicon layers with a defined particle size and texture on a substrate provides for depositing of an amorphous silicon layer on the substrate. The substrate with the amorphous silicon layer is placed into a furnace at an initial temperature lower than the crystallization temperature of amorphous silicon. After an adjustment to thermal equilibrium, the furnace is heated in a controlled fashion from the initial temperature to a target temperature which is higher than the crystallization temperature, whereby the amorphous silicon layer is completely crystallized and becomes a polycrystalline layer. The method is particularly applicable in manufacturing polycrystalline silicon resistances for integrated circuits.
REFERENCES:
patent: 4148931 (1979-04-01), Reuschel
patent: 4151058 (1979-04-01), Kaplan
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4179528 (1979-12-01), Losee
patent: 4213781 (1980-07-01), Noreika
patent: 4217374 (1980-08-01), Ovshinsky
patent: 4322452 (1982-03-01), Krausse
patent: 4357179 (1982-11-01), Adams
patent: 4417092 (1983-11-01), Moustakas
patent: 4441973 (1984-04-01), Noguchi
patent: 4494136 (1985-01-01), Perepezko
patent: 4508609 (1985-04-01), Moustakas
patent: 4529617 (1985-07-01), Chenevas-Paule et al.
patent: 4597989 (1986-07-01), Wonsowicz
patent: 4789560 (1988-12-01), Yen
patent: 4963506 (1990-10-01), Liaw
T. I. Kamins "Structure and Properties of LPCVD Silicon Films" J. Electrochem. Soc. vol. 12. No. 3 Mar. 1980. pp. 686-690.
R. Bisaro et al. "Solid-Phase Cuptallization Kinetics in Doped .alpha.-Si Chemical Vapor Deposition Films" Physical Review B vol. 31, No. 6. Mar. 1985, p. 3568-3575.
K. Zellama et al. "Cuptallization in Amorphous Silicon" J. Appl. Phys. 50(11) Nov. 1979, pp. 6995-7000.
Kinsborn et al., "Crystallization of Amorphous Silicon Films During Low Pressure Chemical Vapor Deposition" Appl. Phys. Lett., vol. 42, No. 9, May 1, 1983, pp. 835-837.
McGinn et al., "The Effects of Deposition Temperature and Rate Upon the Structure of LPCVD Silicon", ECS Meeting (May 1983), pp. 647-648.
Becker et al., "Low resistance polycrystalline silicon by boron or arsenic implantation and thermal crystallization of amorphously deposited films", J. Appl. Phys., vol. 56, No. 4, Aug. 15, 1984, pp. 1233-1236.
Squeland et al, "Crystallization of phosphorus-doped amorphous silicon films prepared by glow discharge decomposition of silane", Revue Phys. Appl., vol. 16, Dec. 1981, pp. 657-662.
Bohm et al., "Formation of Very Shallow Junctions in Poly-SI Emitter Self-Aligned Bipolar Transistors Using Rapid Optical Annealing", Proceeding of 1st Int. Symp of ULSI Science and Technology 1987, Philadelphia, May 1987, pp. 347-357.
Harbeke et al., "High Quality Polysilicon by Amorphous LPCVD Growth", ECS Meeting, May 1983, p. 649.
Wada et al., "Grain Growth Mechanism of Heavily Phosphorus-Implanted Polycrystalline Silicon", J. Electrochem Soc., vol. 125, No. 9, Sep. 1978, pp. 1499-1504.
Kavanagh et al., "The Polycrystalline-Si Contact to GaAs", J. Electrochem Soc., vol. 133, No. 6 Jun. 1986, pp. 1176-1179.
Bertagnolli Emmerich
Kabza Herbert
Beck Shrive
Dang Vi Duong
Siemens Aktiengesellschaft
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