Method for manufacturing a planarized metal layer for semiconduc

Details Method for manufacturing a planarized metal layer for semiconduc Method for manufacturing a planarized metal layer for semiconduc

1991-10-23

1993-04-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 437194, 437203, 437246, B44C 122, C03C 1500, C03C 2506

Patent

active

052000303

ABSTRACT:
A method for manufacturing a planarized metal layer on a wafer of a semiconductor device by providing a wafer and sequentially depositing a conducting layer 1 and an insulating layer 2 on the wafer 10 is described. A contact hole is formed in a portion of the insulating layer 2 exposing a portion of the underlying conducting layer 1 and simultaneously forming a step difference. The resulting wafer 10 comprising the contact hole is placed into a first chamber and heated in order to degas the insulating layer 2 and a first metal layer 3 is deposited on the degassed insulating layer 2 and on the contact hole 5 to a thickness of about 10 to 50% of the desired predetermined final thickness. The resulting wafer comprising the first metal layer is placed into a second chamber and heated. A second metal layer 4 is then deposited on the first metal layer 3 to a thickness of about 50 to 90% of the desired predetermined final thickness to provide a planarized metal layer.

REFERENCES:
patent: 4631806 (1986-12-01), Poppert et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 4936950 (1990-06-01), Doan et al.
patent: 4987099 (1991-01-01), Flanner

Affiliated with

Also associated with

Rating

Method for manufacturing a planarized metal layer for semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a planarized metal layer for semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a planarized metal layer for semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-533487