Method for manufacturing a nitride based semiconductor device

Details Method for manufacturing a nitride based semiconductor device Method for manufacturing a nitride based semiconductor device

2007-11-13

2007-11-13

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257S167000, C257S194000

Reexamination Certificate

active

11095073

ABSTRACT:
Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.

REFERENCES:
patent: 7112860 (2006-09-01), Saxler
patent: 2005/0139818 (2005-06-01), Lee at al.
patent: 10-2004-0046479 (2004-06-01), None

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