Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1997-07-18
2000-09-12
Niebling, John F.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438486, 438657, 438584, 438586, 438931, H01L 2120, H01L 2136
Patent
active
061177512
ABSTRACT:
A method for producing a MIS structure on silicon carbide is provided. Given application of a known CVD method for occupying the surface of a SiC substrate provided with a gate oxide with the silicon serving as gate material, stationary positive charges arise in the region of the oxide/SiC boundary surface whose extremely high effective density (Q.sub.tot >10.sup.12 cm.sup.-2) disadvantageously influences the electrical properties of the finished component. The present method modifies the deposition conditions for the silicon serving as a gate material. Thus, the silicon is deposited from the vapor phase at a temperature of T<580.degree. C. and is thus amorphously applied. During the subsequent doping (drive-in of phosphorous at T>800.degree. C.), the amorphous silicon converts into the polycrystalline condition. Since the crystalline regions in the silicon layer can grow comparatively unimpeded and free of mechanical stresses, the effective density of the negative boundary surface charges arising in the gate oxide lies at values Q.sub.tot <10.sup.11 cm.sup.-2. The method is particularly applied in the manufacture of MOSFETs, MOS capacitors and the like.
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Friedrichs Peter
Schoerner Reinhold
Hack Jonathan
Niebling John F.
Siemens Aktiengesellschaft
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