Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1996-11-21
1999-12-28
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438158, 257 59, H01L 2100
Patent
active
060080655
ABSTRACT:
A method for manufacturing a liquid crystal display is provided. The method includes the steps of forming a gate electrode and a gate pad by sequentially depositing a first metal film and a second metal film on a substrate of a TFT area and a pad area, respectively, by a first photolithography process, forming an insulating film on the entire surface of the substrate on which the gate electrode and the gate pad are formed, forming a semiconductor film pattern on the insulating film of the TFT area using a second photolithography process, forming a source electrode and a drain electrode composed of a third metal film in the TFT area using a third photolithography process, forming a protection film pattern which exposes a portion of the drain electrode and a portion of the gate pad on the substrate on which the source electrode and the drain electrode are formed using a fourth photolithography process, and forming a pixel electrode connected to the drain electrode and the gate pad on the substrate on which the protection film pattern is formed using a fifth photolithography process. By using this method it is possible to reduce the number of photolithography steps required for manufacture and to prevent a battery effect and generation of a hillock in the resulting structure.
REFERENCES:
patent: 4778560 (1988-10-01), Takeda et al.
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5054887 (1991-10-01), Kato et al.
patent: 5374837 (1994-12-01), Uno
patent: 5397719 (1995-03-01), Kim et al.
patent: 5462886 (1995-10-01), Sakai et al.
patent: 5811318 (1998-09-01), Kweon
S. Wolf & R. Tauber, "Silicon Processing for the VLSI Era" vol. 1, pp. 534-535: 559-565: 452-453, 1986.
K. Fuji "Japanese Journal of Applied Physics" vol. 31 1992 Pt. 1, No. 12B pp. 4574-4578, 1992.
Patent Abstracts of Japan, vol. 11, No. 19 (P-537) & JP 61 193128 A (Mitsubishi) *abstract*.
Patent Abstracts of Japan, vol. 18, No. 194 (P-1722) & JP 06 003698 A (NEC) *abstract*.
Patent Abstracts of Japan, vol. 18, No. 481 (P-1797) & JP 06 160905 A (SANYO) *abstract*.
Lee Jueng-gil
Lee Jung-Ho
Nam Hyo-Rak
Bowers Charles
Hawranek Scott J.
Samsung Electronics Co,. Ltd.
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