Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-04
2011-01-04
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S603000, C438S604000, C438S048000, C438S508000
Reexamination Certificate
active
07863178
ABSTRACT:
The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.
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English abstract and machine translation of JP 08-056015.
Park Eun Hyun
Park Joong Seo
Yoo Tae-Kyung
Epivalley Co., Ltd.
Husch & Blackwell LLP
Le Dung A.
Samsung LED Co., Ltd.
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