Method for manufacturing a flash EEPROM cell

Details Method for manufacturing a flash EEPROM cell Method for manufacturing a flash EEPROM cell

1995-07-28

1997-03-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257321, 257324, 257412, 257754, 437 40, 437 52, 437228, 437235, 437233, H01L 29788, H01L 2170

Patent

active

056147473

ABSTRACT:
The present invention discloses a split gate type flash EEPROM cell and a method of manufacturing the same which can prevent over-erasure of the flash EEPROM cell and decrease the cell area by forming a floating gate in the form of a spacer on a side wall of a select gate and by forming a control gate to surround the select gate and the floating gate.

REFERENCES:
patent: 5284784 (1994-02-01), Manley
patent: 5338952 (1994-08-01), Yamauchi

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