Method for manufacturing a field effect transistor having a...

Details Method for manufacturing a field effect transistor having a... Method for manufacturing a field effect transistor having a...

2008-05-08

2010-10-12

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S571000, C438S285000, C438S478000, C438S270000, C257S076000, C257SE21403, C257SE21410, C257SE29246

Reexamination Certificate

active

07811872

ABSTRACT:
An opening for forming a gate electrode is provided by a first photoresist pattern formed on an insulating film. Reactive ion etching by inductively coupled plasma is applied to the insulating film through the first photoresist pattern as a mask to thereby expose the surface of a GaN semiconductor layer, evaporating thereon a gate metal such as NiAu, thereby forming the gate electrode by self-aligned process. This prevents an oxidized film from being formed on the surface of the semiconductor layer. After the gate electrode is formed, a second photoresist pattern is formed to form a field plate on the gate electrode and the insulating film through the second photoresist pattern as a mask. Thereby, Ti having a high adhesiveness with an insulating film made of SiN or the like can be used as a field plate metal.

REFERENCES:
patent: 2003/0203604 (2003-10-01), Makita
patent: 2006/0102929 (2006-05-01), Okamoto et al.
Tamotsu Hashizume et al., “Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AIGaN/GaN Heterostructure Field Effect Transistor,” Japanese Journal of Applied Physics, vol. 45, No. 4, 2006, pp. L111-L113.

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