Method for manufacturing a dual spin valve sensor having a...

Details Method for manufacturing a dual spin valve sensor having a... Method for manufacturing a dual spin valve sensor having a...

2003-10-24

2008-08-19

McDonald, Rodney G (Department: 1795)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192120, C204S192150

Reexamination Certificate

active

07413636

ABSTRACT:
A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.

REFERENCES:
patent: 5635835 (1997-06-01), Mouchot et al.
patent: 6275363 (2001-08-01), Gill
patent: 6341053 (2002-01-01), Nakada et al.
patent: 6381105 (2002-04-01), Huai et al.
patent: 6590803 (2003-07-01), Saito et al.
patent: 6700757 (2004-03-01), Pinarbasi

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