Method for manufacturing a dual damascene opening comprising...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S638000, C438S689000, C257SE21577, C257SE21579

Reexamination Certificate

active

08084357

ABSTRACT:
A method for manufacturing a multi cap layer includes providing a substrate, forming a multi cap layer comprising a first cap layer and a second cap layer formed thereon on the substrate, forming a patterned metal hard mask layer on the multi cap layer, and performing an etching process to etch the multi cap layer through the patterned hard mask layer and to form an opening in the second cap layer.

REFERENCES:
patent: 6037237 (2000-03-01), Park et al.
patent: 6326287 (2001-12-01), Asahina
patent: 6426285 (2002-07-01), Chen et al.
patent: 6790770 (2004-09-01), Chen
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 6939725 (2005-09-01), Kutsunai
patent: 7132369 (2006-11-01), Delgadino et al.
patent: 7244629 (2007-07-01), Ezaki
patent: 7378343 (2008-05-01), Chen et al.
patent: 2003/0044726 (2003-03-01), Chen et al.
patent: 2003/0203321 (2003-10-01), Ma et al.
patent: 2004/0157453 (2004-08-01), Delgadino
patent: 2005/0205519 (2005-09-01), Kim et al.
patent: 2006/0043591 (2006-03-01), Yim et al.
patent: 2007/0148966 (2007-06-01), Baks et al.
patent: 2007/0281497 (2007-12-01), Liu
patent: 2008/0020570 (2008-01-01), Naik
patent: 2008/0138983 (2008-06-01), Lien
patent: 1866528 (2006-11-01), None

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