Method for manufacturing a DRAM cell capacitor

Details Method for manufacturing a DRAM cell capacitor Method for manufacturing a DRAM cell capacitor

1998-12-29

2000-10-17

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, 438398, H01L 2120

Patent

active

061331090

ABSTRACT:
A method of manufacturing a DRAM cell capacitor is provided wherein a capacitor storage electrode is covered with an HSG (Hemi-Spherical Grain) silicon layer to increase capacitance, but the HSG silicon layer is not formed on the top edge of the capacitor storage electrode.

REFERENCES:
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5937307 (1999-08-01), Jenq et al.

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