Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
1999-11-08
2001-08-28
Nguyen, Nam (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C505S475000
Reexamination Certificate
active
06280580
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of manufacturing a large-area, double-sided, high-temperature superconducting oxide thin film using a sputtering deposition technique by which a large-area, high-temperature superconducting oxide thin film is formed on the both surfaces of a large-area single crystal oxide substrate.
2. Information Disclosure Statement
In the prior art of sputtering technique, to produce a large-area, high-temperature superconducting oxide thin film of above 2 inches of diameter, various types of production methods have been proposed such as; a method of producing a large-area thin film on a metal plate by rotating a circular plate type target (U.S. Pat. No. 4,866,032), a method of producing a large-area thin film by attaching a target to the outside of a cylindrical type target supporter (U.S. Pat. No. 5,196,400), and a method of producing a large-area thin film by deposition using a hollow rectangular type cathode target and moving a substrate parallel with the surface of the target [H. Koch, et al. Journal of Vacuum Science and Technology A.9(4), 2374 (1991), Th. Schuring, et al. Physica C 262, 89 (1996)]. By these methods, however, a high-temperature superconducting thin film can be deposited only on one surface of a large-area single crystal substrate.
To apply a high-temperature superconducting thin film to a digital electronic device and a microwave device, however, it is essential to develop a technique by which a thin film can be formed not only on one surface but also on both surfaces of a large-area single crystal oxide substrate.
SUMMARY OF THE INVENTION
It is therefore the object of the present invention is to provide a method of manufacturing a large-area, double-sided, high-temperature superconducting oxide thin film using a sputtering deposition technique by which a high-temperature superconducting oxide thin film of above 2 inches of diameter is formed on both surfaces of a large-area single crystal oxide substrate.
To achieve the object, the manufacturing method in accordance with the present invention comprises the steps of placing two high-temperature superconducting oxide of YBa
2
Cu
3
O
7−x
sintered material targets in a thin film deposition chamber, attaching a large-area single crystal oxide substrate of MgO, SrTiO
3
, LaAlO
3
, Al
2
O
3
, LaSrGaO
4
, which has 2-3 inches diameter, to a substrate supporter piercing through the separator of the thin film deposition chamber, having the large-area single crystal oxide substrate rotate, with the separator of the deposition chamber locating on its center-line, by the rotation of the substrate supporter, placing two substrate heaters toward both surfaces of the large-area single crystal oxide substrate and heating the large-area single crystal oxide substrate thereby, applying a voltage between the sintered material targets and the large-area single crystal oxide substrate, and depositing a high-temperature superconducting target material on both surfaces of the large-area single crystal oxide substrate by having the plasma generated from the two high-temperature superconducting targets contact thereon.
REFERENCES:
patent: 4828664 (1989-05-01), Dietrich et al.
patent: 4866032 (1989-09-01), Fujimori et al.
patent: 5126318 (1992-06-01), Gavaler et al.
patent: 5140004 (1992-08-01), Tanaka et al.
patent: 5196400 (1993-03-01), Chen et al.
H. Koch et al., Hollow cathode discharge sputtering device for uniform large area thin film deposition, Jul. 1991, pp. 2374-2377.
Th. Schurig et al., Large area YBCO thin film deposition using linear hollow cathode discharge sputtering, Physica C 262 (1996), pp. 89-97.
R.A. Rao et al., Uniform deposition of Yba2Cu3O7thin films over an 8 inch diameter area by a 90° off-axis sputtering technique, Appl. Phys. Lett. Dec. 16, 1996, pp. 3911-3913.
Han Seok Kil
Kang Kwang Yong
Suh Jeong Dae
Cantelmo Gregg
Cohen & Pontani, Lieberman & Pavane
Electronics and Telecommunications Research Institute
Nguyen Nam
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