Method for manufacturing a diaphragm sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C257S419000, C257SE21215, C216S099000

Reexamination Certificate

active

07569412

ABSTRACT:
A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

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“Low-pressure vapor-phase epitaxy of silicon on porous silicon,”Material Letters94 (1988), by L. Vescan et al.

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