Method for manufacturing a crystalline silicon layer

Details Method for manufacturing a crystalline silicon layer Method for manufacturing a crystalline silicon layer

2005-06-07

2010-02-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S488000, C257SE21133, C257SE21297

Reexamination Certificate

active

07662702

ABSTRACT:
A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed.

REFERENCES:
patent: 3961997 (1976-06-01), Chu
patent: 4400715 (1983-08-01), Barbee et al.
patent: 4818337 (1989-04-01), Barnett et al.
patent: 5147468 (1992-09-01), Deguchi
patent: 5844351 (1998-12-01), Jones et al.
patent: 5952242 (1999-09-01), Pietsch et al.
patent: 6099662 (2000-08-01), Wang et al.
patent: 6241817 (2001-06-01), Jang et al.
patent: 2002/0025614 (2002-02-01), Jang et al.
patent: 2002/0109152 (2002-08-01), Kobayashi et al.
patent: 08-022991 (1996-01-01), None
patent: 2004/033769 (2004-04-01), None
patent: WO 2004/033769 (2004-04-01), None
Pihan et al, “Polycrystalline Silicon Films on Ceramic Substrates by Aluminum-Induced Crystallisation Process”, 3rd World Conference on Photovoltaic Energy Conversion, May 11-18, 2003. Osaka, Japan. 1182-1185.
Widenborg et al, “Surface Morphology of Poly-Si Films Made by Aluminum-Induced Crystallisation on Glass Substrates”, 2002, Journal of Crystal Growth 242, pp. 270-282.
Bremhe et al., IEEE trans. el. Dev. 46 (1999) 2062.
Gall et al., Proceedings PV in Europe (2002) 87.
Harder et al., Proceedings 28th IEEE PVSC (2000).
Pihan et al., “Formation of polycrystalline silicon on foreign substrates by combination of CVD and Aluminium-Induced crystallization techniques” Conference “PV in Europe”, Rome 2002.
Suryanarayanan, R., “Plasma Spraying: Theory and Applications,” World Scientific, 1993, ISBN 9810213638, 9789810213633, Chapter 6.
Hattori, T., Editor, “Ultra clean surface processing of silicon wafers — secrets of VLSI manufacturing”, Jan. 1, 1998, Springer-Verlag, Berlin, XP002549423, p. 60, lines 1-7.
Ishii et al., “Sub-5 mm thin film crystalline silicon solar cell on alumina ceramic substrate”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 32, No. 6A, Part 02, Jun. 1, 1993, pp. L770-L773.
Letavic et al., “Recrystallized silicon-on-alumina as a monolithic circuit technology”, IEEE 1989 MTTS International Microwave Symposium Digest (Cat. No. 89CH2725-0) IEEE, New York, NY, USA, vol. 1, Jan. 1, 1989, pp. 969-972.

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