Method for manufacturing a crystal with a lattice parameter grad

Details Method for manufacturing a crystal with a lattice parameter grad Method for manufacturing a crystal with a lattice parameter grad

1992-07-02

1994-01-25

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437131, 437132, 437100, 148DIG59, H01L 2120

Patent

active

052812995

ABSTRACT:
A method for manufacturing a crystal comprising at least two elements wherein the proportion of at least one of the elements varies in the direction of the thickness. A CVD process is used. The proportion of the gas components from which is formed the deposition is varied with time. The invention applies to the manufacturing of Si.sub.x Ge.sub.1-x crystals.

REFERENCES:
patent: 4357183 (1982-11-01), Fan et al.
patent: 4804639 (1989-02-01), Yablonovitch
patent: 4833101 (1989-05-01), Fujii
patent: 4981818 (1991-01-01), Anthony et al.
"Metal-organic vapor-phase epitaxy with a novel reactor and characterization of multilayer structures", vol. 43, No. 5-6, May 1987, M. R. Leys et al., pp. 133-142.
"Cooperative growth phenomena in silicon/germanium low-temperature epitaxy", B. S. Meyerson et al., vol. 53, No. 25, Dec. 1988, pp. 2555-2557.
"Growth of Ge Si Layers by Rapid Thermal Processing Chemical Vapor Deposition", K. H. Jung et al., vol. 89/91, May 1, 1990, pp. 216-217.
"Selective heteroepitaxial growth of Si Ge using gas source molecular beam epitaxy", H. Hirayama et al., vol. 56, No. 12, Mar. 1990, pp. 1107-1199 x.

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