Method for manufacturing a contact hole of a semiconductor devic

Details Method for manufacturing a contact hole of a semiconductor devic Method for manufacturing a contact hole of a semiconductor devic

1993-02-11

1994-03-15

Quach, T.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156644, 437228, 437947, 437981, H01L 2128, H01L 213205

Patent

active

052942961

ABSTRACT:
In the formation of a contact hole within highly limited area, the size of the contact hole does not vary. For achieving such purpose, after a first polysilicon pattern is formed, a concave portion is formed by isotropically etching the predetermined depth of an insulating layer. A second polysilicon spacer is then formed at the sidewall of the first polysilicon pattern and the concave portion. Using the etching process employing the first polysilicon pattern and the second polysilicon spacer as a mask, the contact hole is formed by etching the insulating layer.

REFERENCES:
patent: 4551906 (1985-11-01), Ogura et al.
patent: 4636281 (1987-01-01), Buiguez et al.
patent: 4801350 (1989-01-01), Mattox et al.
patent: 4857477 (1989-08-01), Kanamori
patent: 4996167 (1991-02-01), Chen
patent: 5100838 (1992-03-01), Dennison

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