Method for manufacturing a charge coupled device

Details Method for manufacturing a charge coupled device Method for manufacturing a charge coupled device

2009-01-13

2010-11-23

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C257SE31075, C257SE31081

Reexamination Certificate

active

07838344

ABSTRACT:
A method for manufacturing a semiconductor device includes steps of forming an embedded channel12in a semiconductor substrate11,forming a resist layer on the embedded channel12through an oxide film14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region13having a concentration gradient by injecting ions into the embedded channel12through the resist mask, and arranging transfer electrodes15at prescribed positions on the first impurity region13through the oxide film14after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.

REFERENCES:
patent: 4842633 (1989-06-01), Kuribayashi et al.
patent: 6573959 (2003-06-01), Molsen
patent: 7176074 (2007-02-01), Shiau et al.
patent: 5-267206 (1993-10-01), None
patent: 8-250446 (1996-09-01), None
U.S. Appl. No. 12/796,065, filed Jun. 8, 2010, Sasaki.

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