Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1998-08-27
2000-05-30
Niebling, John F.
Semiconductor device manufacturing: process
Electron emitter manufacture
313309, 445 49, 445 50, 445 51, H01L 2100
Patent
active
060690186
ABSTRACT:
A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.
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patent: 5532177 (1996-07-01), Cathey
R.B. Marcus et al., Formation of silicon tips with >Inm radius, Jan. 15, 1990, pp. 236-238.
McGruer et al., Oxidation Sharpened Grated Field Emitter Array Process, Oct. 1991, pp. 2389-2391.
E.C. Boswell et al., Polycrystalline Silicon Field Emitters, 1995, Jul., pp. 181-185.
Cho Kyoung Ik
Lee Jin Ho
Song Yoon-Ho
Electronics and Telecommunications Research Institute
Niebling John F.
Zarneke David A
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