Method for manufacturing a capacitor in a semiconductor device u

Details Method for manufacturing a capacitor in a semiconductor device u Method for manufacturing a capacitor in a semiconductor device u

1996-09-13

1998-03-03

Loring, Susan A.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438757, 438789, 438689, 438381, 438384, 438387, H01L 27108, H01L 218242, H01L 2704, H01L 21822

Patent

active

057233845

ABSTRACT:
There is provided a method for manufacturing a capacitor in a semiconductor device including the steps of forming first and second insulating layers with a first contact hole through to a semiconductor substrate, patterning a first conductive layer to form a pedestal portion of a lower electrode, using a patterned third insulating layer selectively forming an upper portion of the lower electrode from a tungsten nitride thin film, and forming an undercut beneath the pedestal portion by wet-etching the second insulating layer.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn

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