Method for manufacturing a capacitor for a semiconductor device

Fishing – trapping – and vermin destroying

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437 47, 437 52, 437919, 148DIG14, H01L 218242

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active

054439930

ABSTRACT:
A method for manufacturing a capacitor for a semiconductor device, which includes the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern by patterning the first conductive layer, sequentially forming a second conductive layer and a first material layer on the entire surface of the resultant structure, forming a spacer on the sidewall of the second conductive layer by anisotropic-etching the first material layer, forming a second pattern by partially etching the second conductive layer and the first pattern, using the spacer as an etching mask, forming a third conductive layer on the entire surface of the resultant structure, forming a cylindrical storage electrode by anisotropic-etching the third conductive layer, and removing the spacer.

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patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5217914 (1993-06-01), Matsumoto et al.
patent: 5266512 (1993-11-01), Kirsch
patent: 5330614 (1994-07-01), Ahn
patent: 5387532 (1995-02-01), Hamamoto et al.
patent: 5399518 (1995-03-01), Sim et al.

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