Method for manufacturing a capacitor for a semiconductor device

Details Method for manufacturing a capacitor for a semiconductor device Method for manufacturing a capacitor for a semiconductor device

1995-10-25

1997-12-23

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, H01L 218242

Patent

active

057007098

ABSTRACT:
A method for manufacturing a capacitor for a semiconductor device, which includes the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern by patterning the first conductive layer, sequentially forming a second conductive layer and a first material layer on the entire surface of the resultant structure, forming a spacer on the sidewall of the second conductive layer by anisotropic-etching the first material layer, forming a second pattern by partially etching the second conductive layer and the first pattern, using the spacer as an etching mask, forming a third conductive layer on the entire surface of the resultant structure, forming a cylindrical storage electrode by anisotropic-etching the third conductive layer, and removing the spacer.

REFERENCES:
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5217914 (1993-06-01), Matsumoto et al.
patent: 5266512 (1993-11-01), Kirsch
patent: 5330614 (1994-07-01), Ahn
patent: 5399518 (1995-03-01), Sim et al.

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