Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-12-15
2008-10-14
Baumeister, Bradley W (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S151000, C438S697000
Reexamination Certificate
active
07435632
ABSTRACT:
A method for manufacturing a bottom substrate of a liquid crystal display device by using only three masks is disclosed. The method includes the following steps. First, a patterned first metal layer, an insulating layer, a semiconductor layer and a second metal layer are formed subsequently on a substrate. Afterwards, the second metal layer is manufactured to have two different thicknesses by using a photolithographic process. After that, a planar layer is formed on the second metal layer and then the planar layer is etched until part of the second metal layer is exposed. Finally, a patterned transparent electrode layer is formed on the second metal layer.
REFERENCES:
patent: 6784032 (2004-08-01), Lee et al.
patent: 2007/0002196 (2007-01-01), Chiu et al.
patent: 2007/0096100 (2007-05-01), Lee et al.
S.Wolf and T.N.Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 2000, pp. 488, 512, 537, 538.
Chu Ching-Yun
Lee Yi-Wei
AU Optronics Corp.
Bacon & Thomas PLLC
Baumeister Bradley W
Slutsker Julia
LandOfFree
Method for manufacturing a bottom substrate of a liquid... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a bottom substrate of a liquid..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a bottom substrate of a liquid... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3997083