Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1995-06-06
1998-01-06
Chapman, Mark
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430323, 430 8, 430394, 430397, G03C 500
Patent
active
057053219
ABSTRACT:
Multiple-exposure fine-line interferometric lithography, combined with conventional optical lithography, is used in a sequence of steps to define arrays of complex, nm-scale structures in a photoresist layer. Nonlinearities in the develop, mask etch, and Si etch processes are used to modify the characteristics and further reduce the scale of the structures. Local curvature dependent oxidation provides an additional flexibility. Electrical contact to the quantum structures is achieved. Uniform arrays of Si structures, including quantum wires and quantum dots, are produced that have structure dimensions on the scale of electronic wave functions. Applications include enhanced optical interactions with quantum structured Si, including optical emission and lasing and novel electronic devices based on the fundamentally altered electronic properties of these materials. All of the process sequences involve parallel processing steps to make large fields of these quantum structures. The processes are, further, consistent with modern micro lithographic manufacturing practice, promising inexpensive and large-scale manufacture.
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Brueck Steven R. J.
Chu An-Shyang
Draper Bruce L.
Zaidi Saleem H.
Chapman Mark
The University of New Mexico
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