Method for manufacture of magneto-resistive bit structure

Details Method for manufacture of magneto-resistive bit structure Method for manufacture of magneto-resistive bit structure

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C365S173000, C365S158000

Reexamination Certificate

active

06872997

ABSTRACT:
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.

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patent: 6555858 (2003-04-01), Jones et al.

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