Method for manufacture of III-V group compound semiconductor sin

Details Method for manufacture of III-V group compound semiconductor sin Method for manufacture of III-V group compound semiconductor sin

1984-04-04

1986-05-06

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, C30B 2702

Patent

active

045869790

ABSTRACT:
A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.

REFERENCES:
patent: 3980438 (1976-09-01), Castonguay et al.
patent: 4397813 (1983-08-01), Washizuka et al.
patent: 4496424 (1985-01-01), Terashime et al.
Bardsley et al., "Automatic Control of Czochralski Crystal Growth" Journal of Crystal Growth 16, No. 3 (1972) 277-279.

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