Method for manufacture of III-V compound semiconducting single c

Details Method for manufacture of III-V compound semiconducting single c Method for manufacture of III-V compound semiconducting single c

1983-01-05

1985-01-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 156DIG70, C30B 1520, C30B 2702

Patent

active

044964242

ABSTRACT:
A III-V compound semiconducting single crystal is manufactured by a method using an encapsulant, which method comprises allowing the molten mass of a material for the crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling the crystal thereby causing the molten mass to generate bubbles and allowing the departing bubbles to entrain impurities from the molten mass, bringing a seed crystal into contact with the molten mass, applying a potential to the molten mass thereby determining the impurity concentration of the molten mass based on the results of the measurement and, after the impurity concentration of the molten mass determined as described above has reached a prescribed level, initiating the work of pulling the crystal from the molten mass.

REFERENCES:
patent: 3980438 (1976-09-01), Castonguay et al.
AuCoin et al., Liquid Encapsulated Compounding and Czochralski Growth of Semi-insulating Gallium Arsenide, Solid State Tech., Jan. 1979, pp. 59-62, 67.

Affiliated with

Also associated with

Rating

Method for manufacture of III-V compound semiconducting single c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacture of III-V compound semiconducting single c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacture of III-V compound semiconducting single c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-505201