Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-03-07
1998-12-22
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, 438160, 148DIG91, 148DIG93, H01L 21336, H01L 2120
Patent
active
058518592
ABSTRACT:
The present invention is related to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion using a of a substrate using a temperature difference of the surface of a substrate achieve by heating the substrate with a lamp. The method comprises the steps of forming a black matrix layer of metal on a portion of the whole surface of an insulating glass substrate, forming an insulating layer for protecting the substrate on the whole substrate including the black matrix layer, forming source/drain electrodes on the insulating layer over the black matrix, selectively forming a semiconductor layer on the insulating layer including the source/drain electrodes, forming a gate insulating layer and forming a gate electrode.
REFERENCES:
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4569855 (1986-02-01), Matsuda et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
patent: 4683147 (1987-07-01), Eguchi et al.
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 4987008 (1991-01-01), Yamazaki et al.
patent: 5215588 (1993-06-01), Rhieu
patent: 5470768 (1995-11-01), Yanai et al.
Goldstar Co. Ltd.
White John P.
Wilczewski Mary
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