Fishing – trapping – and vermin destroying
Patent
1994-09-09
1996-09-03
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437235, 437240, 437919, H01L 2170, H01L 2700
Patent
active
055523374
ABSTRACT:
A capacitor for a semiconductor memory device employs a tantalum pentoxide film as a dielectric film. The dielectric film is made from tantalum pentoxide film doped with silicon over a first electrode. A second electrode is then formed over the dielectric film. Accordingly, in the method for manufacturing the device, although the dielectric constant of the dielectric film is somewhat lower than the conventional pure tantalum pentoxide film due to the silicon doped within the tantalum pentoxide film, leakage current is reduced and breakdown voltage is increased. Therefore, the dielectric film according to the present invention exhibits excellent electrical characteristics and high reliability.
REFERENCES:
patent: 4589056 (1986-05-01), Stimmell
patent: 4734340 (1988-03-01), Saito et al.
patent: 4868619 (1989-09-01), Mukherjee et al.
patent: 4937650 (1990-06-01), Shinriki et al.
Shinriki et al. UV-O.sub.3 and Dry-O.sub.2 ; Two Steps annealed Chemical Vapor-Deposited Ta2 O.sub.5 films For Storage dielectrics of 64-116.
Dram's, IEEE Transactions on electron devices, pp. 455-462, vol. 38. No. 3, Mar. 1991, Nishioka et al. Interface of SiO.sub.2 at the Ta2 O.sub.5 /Si interface on dielectric characteristics of Ta2 O.sub.5 capacitor, J. Appl. Phys 61(6) Mar. 15, 1987, pp. 2335-2338.
Zaima et al. Conduction Mechanism of Leakage Current in Ta2 O.sub.5 Film on Si Prepared by LPCVD, pp. 2876-2879, Electro Chemical Soc. vol. 137 No. 3, Sep. 1990.
Kang Chang-seok
Kwon Kee-Won
Chaudhuri Olik
Samsung Electronics Co,. Ltd.
Tsai H. Jey
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