Method for making ultrahigh speed bipolar transistor

Details Method for making ultrahigh speed bipolar transistor Method for making ultrahigh speed bipolar transistor

1996-06-17

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Sidewall base contact

438367, 438368, 438371, 438548, 438564, H01L 21331

Patent

active

057733490

ABSTRACT:
An ultrahigh speed bipolar transistor has a base region which is formed from a P.sup.+ base polysilicon sidewall using a self-alignment method, and a base junction window which is formed in order to minimize the collector-base junction capacity. In the method for fabricating this transistor, an insulation layer of oxide silicon or nitrogen silicon is formed under the base polysilicon layer. Accordingly, impurities from the base polysilicon layer do not diffuse into the epitaxial layer during the diffusion process. Instead, the extrinsic base region is formed by the diffusion of impurities from the polysilicon sidewall which is connected to the base polysilicon layer. Therefore the length of the entire base region is shortened. Furthermore, the junction area between the collector region is also lowered. Thus, the collector-base junction capacity is decreased and a higher operating speed is obtained.

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patent: 5541124 (1996-07-01), Miwa et al.
patent: 5643806 (1997-07-01), Miwa et al.
patent: 5648279 (1997-07-01), Imai

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