Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-12-19
2010-06-29
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S008000, C438S960000, C257SE21006, C257SE21134, C257SE21218, C257SE21245, C257SE21324, C257SE21329, C257SE51040
Reexamination Certificate
active
07745302
ABSTRACT:
A method for making transmission electron microscope gird is provided. An array of carbon nanotubes is provided and drawing a carbon nanotube film from the array of carbon nanotubes. A substrate has a plurality of spaced metal girds attached on the substrate. The metal girds are covered with the carbon nanotube film and treating the carbon nanotube film and the metal girds with organic solvent. A transmission electron microscope (TEM) grid is obtained by removing remaining CNT film.
REFERENCES:
patent: 6930313 (2005-08-01), Fujieda et al.
patent: 7085361 (2006-08-01), Thomas
patent: 2006/0274889 (2006-12-01), Lu et al.
patent: 2008/0237464 (2008-10-01), Zhang et al.
Chen Zhuo
Fan Shou-Shan
Feng Chen
Jiang Kai-Li
Li Qun-Qing
Bonderer D. Austin
Hon Hai Precision Industry Co. Ltd.
Nhu David
Tsinghua University
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