Method for making thin film transistors with lightly doped...

Details Method for making thin film transistors with lightly doped... Method for making thin film transistors with lightly doped...

2006-04-25

2006-04-25

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S149000, C438S153000, C438S162000

Reexamination Certificate

active

07033902

ABSTRACT:
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

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