Method for making thin film transistors for a liquid crystal dis

Details Method for making thin film transistors for a liquid crystal dis Method for making thin film transistors for a liquid crystal dis

1996-09-05

1997-07-29

Trinh, Michael

Fishing, trapping, and vermin destroying

437 41TFT, 437 51, 148DIG150, H01L 21786

Patent

active

056521588

ABSTRACT:
A method of manufacturing thin film transistors for use in a liquid crystal display which reduces the failures due to excessive leakage current. A silicon layer, first insulating layer, and gate electrode layer are serially formed over a transparent substrate. The gate electrode layer is patterned to form a plurality of gate electrodes and associated pairs of gate line electrodes, and the silicon layer is patterned into thin-film transistor regions. Then, a relatively thick second insulating layer is formed over the substrate, and contact holes are formed in the second insulating layer. Finally, a metal layer is formed and patterned over the second insulating layer and through the contact holes to connect each gate electrode with its associated pair of gate line electrodes; and to form source and drain electrodes. The thick second insulating layer provides increased spacing between the thin-film transistors and the associated gate interconnects, thereby reducing leakage current and failures due to excessive leakage current.

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"Enhanced Polysilicon Thin-Film Transistor Performance By Oxide Encapsulation," by John R. Troxell and Marie I. Harrington. J. Electrochem. Soc., vol. 138, No. 3, Mar. 1991--The Electrochemical Society, Inc.

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