Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-04-02
2011-11-08
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S478000, C257SE21128, C977S938000
Reexamination Certificate
active
08053291
ABSTRACT:
A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.
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Fan Shou-Shan
Jiang Kai-Li
Li Qun-Qing
Liu Chang-Hong
Altis Law Group, Inc.
Hon Hai Precision Industry Co. Ltd.
Munoz Andres
Pham Thanh V
Tsinghua University
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