Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-10-11
2010-11-09
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S158000
Reexamination Certificate
active
07829398
ABSTRACT:
A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.
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Hu Tarng-Shiang
Huang Liang-Ying
Shen Yu-Yuan
Wang Yi-Kai
Industrial Technology Research Institute
Jianq Chyun IP Office
Menz Laura M
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