Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-06-19
2000-02-01
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438159, 438486, 438487, H01L 2100, H01L 2120
Patent
active
060202246
ABSTRACT:
In production of a thin film transistor, a gate electrode is formed on an insulating substrate. A gate nitride film and a gate oxide film are formed on the gate electrode. A semiconductor thin film is formed on the gate oxide film. The semiconductor thin film is irradiated with laser light for crystallization. The growth of the crystal grains in a first section of the semiconductor thin film lying just above the gate electrode is more significant than that of the crystal grains in a second section of the semiconductor thin film lying in a position other than just above the gate electrode. An impurity is selectively doped into the second section of the semiconductor thin film to form a source region and a drain region, while the first section of the semiconductor thin film is left without modification as a channel-forming region.
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Hayashi Hisao
Shimogaichi Yasushi
Lebentritt Michael S
Niebling John F.
Sony Corporation
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