Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-04-11
2006-04-11
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S796000, C427S076000
Reexamination Certificate
active
07026258
ABSTRACT:
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
REFERENCES:
patent: 5578503 (1996-11-01), Karg et al.
patent: 5674555 (1997-10-01), Birkmire et al.
patent: WO 00/62347 (2000-10-01), None
Guillen et al.; “Cathodic Electrodeposition of CulnSe2Thin Films”; 2194 Thin Solid Films; 195 Jan. (1991), Nos. 1/2, Lausanne, CH, pp. 137-146, XP00177084.
Tsvetkova et al., “Preparation and structure of annealed CuInSe2electrodeposited films”; Thin Solid Films 311 (1997) pp. 101-106.
Chowles et al., “Deposition and Characterization of CuInSe2”; Renewable Energy, vol. 6, No. 5-6, 1995, pp. 613-618.
Guillén et al.; “Recrystallization and components redistribution processes in electrodeposited CuInSe2thin films”; Thin Solid Films 387; 2001, pp. 57-59.
Pern et al.; “Characterizations of Electrodeposited CuInSe2Thin Films: Structure, Deposition and Formation Mechanisms”; 2194 Thin Solid Films; 202 Jul. 30, (1991), No. 2, Lausanne, CH, pp. 299-314.
Nakamura et al.; “Composition control of electrodeposited Cu-In-Se layers for thin film CuInSe2preparation”; Solar Energy Materials and Solar Cells; 50 (1998), pp. 25-30.
Calixto et al.; “Compositional and optoelectronic properties of CIS and CIGS thin films formed by electrodeposition”; Solar Energy Materials & Solar Cells 59 (1999), pp. 75-84.
Ben-Farah Moëz
Cowache Pierre
Grand Pierre-Philippe
Guillemoles Jean-François
Guimard Denis
Centre National de la Recherche Scientifique--CNRS
Electricite de France (Service National
Kennedy Jennifer
Kilpatrick & Stockton LLP
Lee Kyoung
LandOfFree
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