Method for making thin-film semiconductor device

Details Method for making thin-film semiconductor device Method for making thin-film semiconductor device

2007-09-25

2007-09-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S487000, C438S308000, C438S795000, C257SE21133, C257SE21134

Reexamination Certificate

active

11236001

ABSTRACT:
A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is continuously irradiated with the laser beam while shifting the position of the semiconductor thin film irradiated with the laser beam at a predetermined velocity so that excess hydrogen can be removed from the region irradiated with the laser beam without evaporating and expanding hydrogen ions in the semiconductor thin film.

REFERENCES:
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patent: 6132818 (2000-10-01), Tanaka et al.
patent: 6274463 (2001-08-01), Chaiken
patent: 6872977 (2005-03-01), Hatano et al.
patent: 2005/0164434 (2005-07-01), Arakawa et al.
patent: 2006/0040436 (2006-02-01), Yamamoto et al.

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