Method for making thin film cadmium telluride and related semico

Details Method for making thin film cadmium telluride and related semico Method for making thin film cadmium telluride and related semico

1982-06-14

1984-05-01

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG72, 156DIG88, 136258, 136260, 136262, C30B 1912

Patent

active

044459653

ABSTRACT:
A thin cadmium-telluride semiconductor film for use in solar cells is grown epitaxially on a second semiconductor film, typically tellurium, which may be epitaxial on a substrate semiconductor, typically single-crystal cadmium-telluride. The second semiconductor has a lower resistance to layered cleaving than the desired semiconductor. Application of a strain to the sandwich causes the desired thin CdTe layer to peel off by fracture along the plane of the second semiconductor.

REFERENCES:
patent: 3959045 (1976-05-01), Antypas
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4255208 (1981-03-01), Deutscher et al.
Horel et al., IBM Technical Disclosure Bulletin, vol. 18, No. 2, 7/75, pp. 544-545.
McClelland et al., 38th Annual Device Research Conference 6/23-25, 1980, Cleft Process.
Pamplin, Crystal Growth 2d, Pergamon, N.Y., 1980.

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