Method for making tapered microminiature silicon structures

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156651, 156654, 1566591, 156662, 445 24, 313366, H01L 21306, B44C 122, C03C 1500, C03C 2506

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active

052019926

ABSTRACT:
Tapered silicon structures, of interest for use, e.g., in atomic force microscopes, in field-emission devices, and in solid state devices are made using silicon processing technology. Resulting tapered structures have, at their tip, a radius of curvature of 10 nanometers or less. Such preferred silicon structures are particularly suited as electron emitters in display devices.

REFERENCES:
patent: 2817002 (1957-12-01), Dyke et al.
patent: 3852595 (1974-12-01), Aberth
patent: 3970887 (1976-07-01), Smith et al.
patent: 4307507 (1981-12-01), Gray et al.
patent: 4513308 (1985-04-01), Green et al.
patent: 4578614 (1986-03-01), Gray et al.
patent: 4685996 (1987-08-01), Busta et al.
patent: 4721885 (1988-01-01), Brodie et al.
patent: 4766340 (1988-08-01), Vander Mast et al.
patent: 4940916 (1990-06-01), Borel et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 5100355 (1992-03-01), Marcus et al.
R. B. Marcus et al, "A novel vacuum microelectronics electron field emitter," The First International Vacuum Microelectronics Conference Proceedings, Jun. 13-15, 1988, sponsored by The Electron Device Society of the IEEE.
C. E. Holland et al, "Spindt cold cathode vacuum fluorescent display," Proceedings of the EuroDisplay 87, pp. 1-3.
R. Green et al, "Vacuum integrated circuits," Proceedings of the International Electron Devices Meeting, 1985, pp. 172-175.
C. A. Spindt et al, "Physical properties of thin-film emission cathodes with molybdenum cones," Journal of Applied Physics, 1976, vol. 47, pp. 5248-5263.
J. B. Warren, "Control of silicon field emitter shape with isotropically etched oxide masks," Proceedings of the Second International Conference on Vacuum Microelectronics, Jul. 1989, pp. 37-40.
D. Stephani et al, "Fabrication of densely packed sharp silicon field emitters using dry etching techniques," Proceedings of the Second International Conference on Vacuum Microelectronics, Jul. 1989, p. 18.
D. J. Elliott, "Integrated Circuit Fabrication Technology," 1989, Second Edition, McGraw-Hill Publishing Company, New York.
E. Yablonovitch et al, "Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces," Physical Review Letters, 1986, vol. 57, pp. 249-252.

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