Method for making single and double gate field effect transistor

Details Method for making single and double gate field effect transistor Method for making single and double gate field effect transistor

1996-12-17

1998-06-30

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, 438596, 438157, H01L 2186

Patent

active

057733317

ABSTRACT:
The present invention concerns single-gate and double-gate field effect transistors having a sidewall source contact and a sidewall drain contact, and methods for making such field effect transistors. The channel of the present field effect transistors is raised with respect to the support structure underneath and the source and drain regions form an integral part of the channel.

REFERENCES:
patent: 4714685 (1987-12-01), Schubert
patent: 4797718 (1989-01-01), Schubert
patent: 5019525 (1991-05-01), Virkus et al.
patent: 5027177 (1991-06-01), Vasudev
patent: 5166084 (1992-11-01), Pfiester
patent: 5262655 (1993-11-01), Ashida
patent: 5273921 (1993-12-01), Neudeck et al.
patent: 5289027 (1994-02-01), Terrill et al.
patent: 5346839 (1994-09-01), Sundaresan
patent: 5348899 (1994-09-01), Dennison et al.
patent: 5376561 (1994-12-01), Vu et al.
patent: 5420048 (1995-05-01), Kondo
patent: 5461250 (1995-10-01), Burghartz et al.

Affiliated with

Also associated with

Rating

Method for making single and double gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making single and double gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making single and double gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1858458