Method for making silicon wafers

Details Method for making silicon wafers Method for making silicon wafers

1985-03-28

1986-07-01

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG65, 156DIG66, C30B 2518

Patent

active

045978220

ABSTRACT:
A method for manufacturing a silicon wafer includes growing a layer of low-resistivity crystalline silicon upon a precision-ground slice of single-crystal, high-resistivity silicon. The slice of single-crystal silicon has a thickness sufficient to withstand handling during the initial part of the processing. The crystalline silicon is built up to a thickness which is sufficient to withstand handling and processing of the finished wafer. The layer of single-crystal silicon is thereupon precision ground to reduce its final thickness to a value required for the devices to be formed thereon. The crystalline layer performs gettering to remove impurities from the single-crystal silicon during normal heating attendant to the formation of the solid-state devices thereon. The present invention further includes a silicon wafer made by the process of the invention.

REFERENCES:
patent: 4147584 (1979-04-01), Garrison et al.
Doo et al., IBM Technical Disclosure Bulletin V. 5, No. 2, 7/62, p. 50-51.

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