Method for making silicon containing dielectric films

Details Method for making silicon containing dielectric films Method for making silicon containing dielectric films

2005-11-22

2005-11-22

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S906000

Reexamination Certificate

active

06967176

ABSTRACT:
Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600° C. to 1,200° C., and at a pressure less than 50 torr.

REFERENCES:
patent: 4582561 (1986-04-01), Ioku et al.
patent: 5507874 (1996-04-01), Su et al.
patent: 6077751 (2000-06-01), Marcus et al.
patent: 6299683 (2001-10-01), Rupp et al.

Affiliated with

Also associated with

Rating

Method for making silicon containing dielectric films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making silicon containing dielectric films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making silicon containing dielectric films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3495627