Method for making shielded capacitor structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S253000, C257S306000

Reexamination Certificate

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06969680

ABSTRACT:
A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

REFERENCES:
patent: 4470096 (1984-09-01), Guertin
patent: 6737698 (2004-05-01), Paul et al.

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