Method for making semiconductor structure

Details Method for making semiconductor structure Method for making semiconductor structure

1966-08-01

1981-05-19

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576R, 29576W, 29578, 29580, 29584, 148187, 156648, 156649, 156657, 156662, 2041291, 20412935, 2041294, 20412946, 20412965, 204 32S, H01L 2122, H01L 21304, H01L 21308

Patent

active

042683483

ABSTRACT:
1. In a method for forming a semiconductor structure utilizing a semiconductor body, forming a grid structure in the semiconductor body, forming a support structure upon the grid structure, removing only a portion of the semiconductor body to provide a semiconductor body which has a substantially uniform thickness in the vicinity of the grid structure and in which the grid structure does not intercept the exposed surface of the semiconductor body, and forming additional grid structure in the semiconductor body joining the first named grid structure so that islands of semiconductor material are formed in the semiconductor body which are isolated from each other and from the support structure.
23. In a method for forming a semiconductor structure utilizing a semiconductor body having a surface, forming a layer of insulating material on the surface of the semiconductor body, forming a recessed grid in the layer of insulating material and extending into the semiconductor body, forming a layer of insulating material on the recessed grid adhering to said surface and having a depth which is insufficient to fill the recessed grid to form a grid structure in a semiconductor body prior to the formation of a semiconductor device in the semiconductor body, forming a support structure upon the grid structure, removing a portion of the semiconductor body and diffusing isolation fences into the semiconductor body which extend and make contact with the layer of insulating material to form a plurality of islands of semiconductor material isolated from each other and from the support structure.

REFERENCES:
patent: 2656496 (1953-10-01), Sparks
patent: 3073764 (1963-01-01), Sullivan
patent: 3117260 (1964-01-01), Noyce
patent: 3133336 (1964-05-01), Marinace
patent: 3161576 (1964-12-01), Teichner
patent: 3296040 (1967-01-01), Wigton
patent: 3313013 (1967-04-01), Last
patent: 3391023 (1968-07-01), Frescura
patent: 3416224 (1968-12-01), Armstrong et al.
patent: 3421205 (1969-01-01), Pollock
patent: 3461003 (1969-08-01), Jackson, Jr.
patent: 4139401 (1979-02-01), McWilliams et al.

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