Method for making semiconductor structure

Details Method for making semiconductor structure Method for making semiconductor structure

1970-01-27

1980-03-18

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29578, 29580, 148187, 156648, 156662, H01L 21306

Patent

active

041938364

ABSTRACT:
Method for making a semiconductor structure having isolated islands of semiconductor material from a semiconductor body by forming a first layer of insulating material on a surface of the body having a first support structure upon the layer of insulating material and then forming grooves in the semiconductor body which extend to the layer of insulating material formed from the semiconductor body. A second layer of insulating material is then formed on the exposed surfaces of the islands. A second support structure is then formed on the second layer of insulating material. Thereafter, the first support structure is removed and circuit devices are fabricated in the isolated islands.

REFERENCES:
patent: 3531857 (1970-10-01), Iwamatsu
patent: 4139401 (1979-02-01), McWilliams et al.

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