Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Patent
1997-07-17
1999-03-09
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
438962, H01L 2120
Patent
active
058800123
ABSTRACT:
The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.
REFERENCES:
patent: 5416331 (1995-05-01), Ichikawa et al.
patent: 5512808 (1996-04-01), Clark, Jr. et al.
patent: 5518955 (1996-05-01), Goto et al.
Lyding, J.W., et al. Nanometer scale patterning and oxidation of silicon surfaces with an ultrahigh vacuum scanning tunneling microscope, J. Vac. Sci. Technol., vol. 12, No. 6, pp. 3735-3740, Nov./Dec. 1994.
Perkins, F.K., et al. Fabrication of 15 nm wide trenches in Si by vacuum scanning tunneling microscope lithography of an organosilane self-assembled film and reactive ion etching, Appl. Phys. Lett., vol. 68, No. 4, pp. 550-552, Jan. 22, 1996.
Ha Jeong-Sook
Park Kang-Ho
Bowers Charles
Christianson Keith
Electronics and Telecommunications Research Institute
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