Method for making semiconductor integrated circuit device having

Details Method for making semiconductor integrated circuit device having Method for making semiconductor integrated circuit device having

1996-01-11

1999-05-18

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438672, H01L21/4763;21/44

Patent

active

059045566

ABSTRACT:
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

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Talieh, et al., "Novel Method for Aluminum Planarization for Submicron High Aspect Ratio Contacts", Jun. 8, 1993 VMIC conference, pp. 211-213.
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