Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-05
2000-11-07
Thomas, Tom
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438649, 438671, 438672, 438673, 438701, 257750, 257754, 257757, 257761, 257763, 257764, 257768, 257770, 257774, H01L 21311, H01L 2144, H01L 21441, H01L 214763
Patent
active
061436496
ABSTRACT:
The present invention is directed to a method for forming semiconductor devices and semiconductor device precursors having gradual slope contacts. The method for forming a semiconductor precursor includes the steps of: forming a layer of conductive material in a first layer; forming a layer of a hard mask material onto at least a portion of the first layer; etching the layer of hard mask material to expose a portion of the first layer; forming facets on the layer of hard mask material; and forming a via in the first layer such that the via extends through the first layer to expose at least a portion of the layer of conductive material.
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Micro)n Technology, Inc.
Souw Bernard E.
Thomas Tom
LandOfFree
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