Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2005-01-04
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S114000, C438S720000, C438S754000
Reexamination Certificate
active
06838368
ABSTRACT:
In a semiconductor device, a plurality of wiring films are formed on a front surface of a base comprising an insulating resin and having electrode-forming holes, the surfaces of the wiring films and the surface of the base being positioned on the same plane and at least parts of the wiring films overlapping with the electrode-forming holes; a conductive material is embedded into the electrode-forming holes to form external electrodes on the back surface, away from the wiring films, of the base; a semiconductor element is positioned on the front surface of the base with an insulating film therebetween, the back surface of the semiconductor element being bonded to said front surface of the base; wires bond the electrodes of the semiconductor element to the corresponding wiring films; and a resin seals the wiring films and the wires.
REFERENCES:
patent: 5976912 (1999-11-01), Fukutomi et al.
Ohde Tomoshi
Ohsawa Kenji
Fourson George
Pham Thanh V
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
LandOfFree
Method for making semiconductor device using a nickel film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making semiconductor device using a nickel film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making semiconductor device using a nickel film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3430261